產品介紹

Ⅰ.半導體製程高純特殊氣體 (High Purity Gases Processes for Semiconductor Fabrication):

*蝕刻氣體 (Etchant Gases)

以鹵化物及鹵碳化合物為主:

Chlorine (Cl2)、Hydrogen Chloride (HCl)、Hydrogen Fluoride (HF)、Hydrogen Iodide (HI)、Hydrogen Bromide (HBr)、Boron Trichloride (BCl3)、Nitrogen Trifluoride (NF3 )、Sulfur Hexafluoride (SF6 )、Halocarbon-14 (CF4)、Halocarbon- 23 (CHF3)、Halocarbon-116 (C2F6)、Halocarbon-318 (C4F8) 等

*離子植入氣體 (Dopant Gases)

含硼 (B)、磷 (P)、砷 (As)等III/V族原子之氣體:

Phosphine (PH3)、Arsine (AsH3)、Diborane (B2H6)、Boron Trifluoride (BF3)、Boron-11 Trifluoride (B¹¹F3)、Boron Tribromide (BBr3)、Phosphorus Pentafluoride (PF5)、Phosphorus Trifluoride (PF3)、Indium Iodide (InI) 等

*矽族氣體 (Silicon Precursor Gases)

含矽 (Si) 或鍺 (Ge) 之甲乙基烷類:

Silane (SiH4)、Disilane (Si2H6)、Dichlorosilane (SiH2Cl2, DCS)、Trichlorosilane (SiHCl3, TDC)、Silicon Tetrachloride (SiCl4)、Silicon Tetrafluoride (SiF4)、Germane (GeH4)、Germane Tetrafluoride (GeF4) 等

*反應性氣體 (Reactant Gases)

以碳系及氮氫、氮氧化物為主:

Carbon Monoxide (CO)、Carbon Dioxide (CO2)、Nitric Oxide (NO)、Nitrous Oxide (N2O)、Ammonia (NH3)、Propylene (C3H6)、Ethylene (C2H4)、Acetylene (C2H2 ) 等

*超高純度氣體 (Ultra High Purity Gases)

純度達99.9999%以上之單一高純氣體, 鋼瓶裝CGA/DISS Valve:

Hydrogen (H2)、Helium (He)、Nitrogen (N2)、Argon (Ar)、Oxygen (O2)

*反應室潔淨氣體 (Chamber Clean Gases)

SF6、NF3、CF4、C2F6、C3F8、C4F8、H2/N2 等

Ⅱ.太陽能/LED製程高純氣體與化學品 (High Purity Gases & Chemicals Processes for Solar/LED Fabrication):

*高純度化學品 (High Purity Chemicals)

- Tetraethylorthosilicate (TEOS)

- Triethoxyarsine (TEOA)

- Trimethylaluminum (TMAl)

- Trimethylboron (TMB) & Mixtures

- Trimethylgallium (TMGa)

- Trimethylindium (TMIn)

- Diethylzinc (DEZn) & Mixtures

- Bis (cyclopentadienyl) Magnesium (Cp2Mg)

- Indium Chloride (InCl3)

*高純度光源稀有氣體 (Lighting Pure Rare Gases)

純度達99.999%以上之 Argon、Neon 、Krypton、Xenon

Ⅲ.特殊混合氣體 (Specialty Mixtures)

*製程混合氣體 (Process Mixtures):

- Arsine Mixtures (AsH3 in He, H2, Ar, N2)

- Diborane Mixtures (B2H6 in He, H2, Ar, N2)

- Germane Mixtures (GeH4 in He, H2, Ar, N2)

- Phosphine Mixtures (PH3 in He, H2, Ar, N2, SiH4)

- Silane Mixtures (SiH4 in He, H2, Ar, N2)

- Disilane Mixtures (Si2H6 in He, H2, Ar, N2)

- Halocarbon-14/Oxygen Mixtures:

Plasma Etching (4-8%O2/CF4), Plasma Desmearing(20-30%CF4/O2)

- Hydrogen Selenide Mixtures (H2Se in He, H2, Ar, N2)

- Boron Trichloride Mixtures (BCl3 in He, N2)

- Oxygen/Helium(6N) Mixtures (O2/He)

- Hydrogen Mixtures (H2 in N2, Ar)

*製程標準氣體 (Process Standards):

依客戶製程需求配製 ppm 或 % 之標準氣體, 分一級標準 (Primary Standard)、二級標準 (Certified Standard) 及依重量法配製未分析之重量法標準 (Gravimetric Standard) 等規格。

*鹵素激光鐳射混合氣體 (Halogen Excimer Laser Mixtures):

- %Fluorine(F2) in He, Ar, Ne, Kr, Xe

- %F2+%Ar in He, Ne、%F2+%Kr in He, Ne、%F2+%Ar+%Ne/He、%F2+%Ar+%He/Ne

- %HCl in He, Ne、%HCl+%H2 in He, Ne、%HCl+%H2+%Xe/Ne

*鐳射混合氣體 (Laser Gas Mixtures):

- Helium-Neon Laser Gas Mixtures: %Ne/He、%Ar+%He/Ne

- Ion Laser Gas Mixtures: %Ar/Kr

- Molecular Laser gas Mixtures:

%CO2+%N2/He、%CO+%CO2+%N2/He、%H2+%CO+%CO2+%N2/He

*Gas Mixtures for Window Insulation

- %Ar/Kr、%O2/Kr、%O2+%Kr/Argon、%Xe/Kr

*Gas Mixtures for Plasma Display Panel

- %Ar/Ne (for CCFL)、%Kr/Ne、%Xe/He、%Xe/Ne